Dynamics of accumulation of implanted hydrogen in beryllium; Journal of Nuclear Materials; Vol. 233-237, Pt. 2 (1 Oct.)
| Parent link: | Journal of Nuclear Materials.— , 1959- Vol. 233-237, Pt. 2 (1 Oct.).— 1996.— P. 857-859 |
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| Tác giả chính: | |
| Tác giả khác: | , |
| Tóm tắt: | The behaviour of hydrogen implanted in beryllium was investigated based on simulation of the effect of high-temperature plasma and the products of nuclear fusion. The hydrogen depth distribution was measured by the elastic nuclear detection method. The energy of implanted hydrogen ions was 10 keV, the temperature of the samples was either 25 or 400°C, maximum implantation fluence was 1018 cm−2. It is shown that the hydrogen diffusion was closely connected with defect motion produced during irradiation. В фонде НТБ ТПУ отсутствует |
| Ngôn ngữ: | Tiếng Anh |
| Được phát hành: |
1996
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| Những chủ đề: | |
| Định dạng: | Chương của sách |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=599250 |