Development of filtered DC metal plasma ion implantation and coating deposition methods based on high-frequency short-pulsed bias voltage application; Vacuum; Vol. 78, iss. 2-4

Development of filtered DC metal plasma ion implantation and coating deposition methods based on high-frequency short-pulsed bias voltage application; Vacuum; Vol. 78, iss. 2-4

Bibliografiset tiedot
Parent link:	Vacuum Vol. 78, iss. 2-4.— 2005.— P. 331-336
Muut tekijät:	Ryabchikov A. I. Aleksandr Ilyich, Ryabchikov I. A., Stepanov I. B.
Yhteenveto:	Proceedings of the fifth International Conference on Ion Implantation and other Applications of Ions and Electrons (ION 2004) An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10-99% are considered. The regularities of ion implantation and metal plasma deposition for metal and dielectric samples are experimentally investigated. Experimentally, it has been shown that metal plasma-based ion implantation, high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition and ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, with pulse repetition rate smoothly adjusted in the range (2-4.4)×105 pps and pulse duration ranging from 0.5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor have been examined. В фонде НТБ ТПУ отсутствует
Kieli:	englanti
Julkaistu:	2005
Aiheet:	труды учёных ТПУ
Aineistotyyppi:	Kirjan osa
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=599029

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