Positron annihilation in silicon crystals with mechanically processed surfaces; Applied Physics A: Materials Science and Processing; Vol. 8, № 3

Positron annihilation in silicon crystals with mechanically processed surfaces; Applied Physics A: Materials Science and Processing; Vol. 8, № 3

書目詳細資料
Parent link:	Applied Physics A: Materials Science and Processing.— , 1973- Vol. 8, № 3.— 1975.— P. 273-276
主要作者:	Arefyev (Afef'ev, Arefiev) K. P. Konstantin Petrovich
其他作者:	Karetnikov A. S., Vorobiev S. A.
總結:	The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals. В фонде НТБ ТПУ отсутствует
語言:	英语
出版:	1975
主題:	труды учёных ТПУ
格式:	Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=598269

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