Positron annihilation in silicon crystals with mechanically processed surfaces; Applied Physics A: Materials Science and Processing; Vol. 8, № 3
| Parent link: | Applied Physics A: Materials Science and Processing.— , 1973- Vol. 8, № 3.— 1975.— P. 273-276 |
|---|---|
| 主要作者: | Arefyev (Afef'ev, Arefiev) K. P. Konstantin Petrovich |
| 其他作者: | Karetnikov A. S., Vorobiev S. A. |
| 總結: | The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals. В фонде НТБ ТПУ отсутствует |
| 語言: | 英语 |
| 出版: |
1975
|
| 主題: | |
| 格式: | Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=598269 |
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