Positron annihilation in silicon crystals with mechanically processed surfaces

Positron annihilation in silicon crystals with mechanically processed surfaces

Podrobná bibliografie
Parent link:Applied Physics A: Materials Science and Processing.— , 1973-
Vol. 8, № 3.— 1975.— P. 273-276
Hlavní autor: Arefyev (Afef'ev, Arefiev) K. P. Konstantin Petrovich
Další autoři: Karetnikov A. S., Vorobiev S. A.
Shrnutí:The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals.
В фонде НТБ ТПУ отсутствует
Jazyk:angličtina
Vydáno: 1975
Témata:
труды учёных ТПУ
Médium: Kapitola
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=598269

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