Positron annihilation in silicon crystals with mechanically processed surfaces; Applied Physics A: Materials Science and Processing; Vol. 8, № 3
| Parent link: | Applied Physics A: Materials Science and Processing.— , 1973- Vol. 8, № 3.— 1975.— P. 273-276 |
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| Auteur principal: | |
| Autres auteurs: | , |
| Résumé: | The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals. В фонде НТБ ТПУ отсутствует |
| Langue: | anglais |
| Publié: |
1975
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| Sujets: | |
| Format: | Chapitre de livre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=598269 |
| Résumé: | The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals. В фонде НТБ ТПУ отсутствует |
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