Positron annihilation in Si and GaAs crystals with an applied magnetic field; Physics Letters A; Vol. 59, iss. 3

Positron annihilation in Si and GaAs crystals with an applied magnetic field

Bibliografiske detaljer
Parent link:	Physics Letters A.— , 1967- Vol. 59, iss. 3.— 1976.— P. 219-220
Andre forfattere:	Arefyev (Afef'ev, Arefiev) K. P. Konstantin Petrovich, Karetnikov A. S., Tsoi A. A., Vorobiev S. A.
Summary:	The narrow components in angular correlation curves of positron annihilation in Si and GaAs were observed. Hence it follows the formation of positronium-like states in semiconductors. Effects of mechanical and radiation treatment of the samples of Ps-states are discussed. В фонде НТБ ТПУ отсутствует
Sprog:	engelsk
Udgivet:	1976
Fag:	труды учёных ТПУ
Format:	Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=598258

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