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|a 596786
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|a 20110824d2005 k||y0rusy50 ba
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|a eng
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| 102 |
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|a RU
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| 200 |
1 |
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|a Nanosecond semiconductor diodes for pulsed power switching
|f I. V. Grekhov, G. A. Mesyats
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| 333 |
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|a В фонде НТБ ТПУ отсутствует
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| 461 |
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|t Physics-Uspekhi
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| 463 |
|
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|t Vol. 48, № 7
|v P. 703-712
|d 2005
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| 610 |
1 |
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|a труды учёных ТПУ
|
| 700 |
|
1 |
|a Grekhov
|b I. V.
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| 701 |
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1 |
|a Mesyats
|b G. A.
|c russian physicist
|c academican, vice-president of RAS
|c graduate of Tomsk Polytechnic Institute
|f 1936-
|g Gennady Andreyevich
|3 (RuTPU)RU\TPU\pers\28088
|4 070
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| 801 |
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1 |
|a RU
|b 63413507
|c 20110824
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| 942 |
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|c CR
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