Physical basis for high power semiconductor nanosecond opening switches; The 12th IEEE International Pulsed Power Conference, Monterey, CA, june 27-30, 1999; Vol. 2

Physical basis for high power semiconductor nanosecond opening switches

Bibliographic Details
Parent link:	The 12th IEEE International Pulsed Power Conference, Monterey, CA, june 27-30, 1999: digest of technical papers.— , 1999 Vol. 2.— 1999.— P. 1158-1161
Main Author:	Grekhov I. V.
Other Authors:	Mesyats G. A. Gennady Andreyevich
Summary:	В фонде НТБ ТПУ отсутствует
Language:	English
Published:	1999
Subjects:	труды учёных ТПУ
Format:	Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=596713

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