Grekhov I. V. & Mesyats G. A. Gennady Andreyevich. (1999). Physical basis for high power semiconductor nanosecond opening switches. 1999.
Chicago Style (17th ed.) CitationGrekhov I. V. and Mesyats G. A. Gennady Andreyevich. Physical Basis for High Power Semiconductor Nanosecond Opening Switches. 1999, 1999.
MLA (9th ed.) CitationGrekhov I. V. and Mesyats G. A. Gennady Andreyevich. Physical Basis for High Power Semiconductor Nanosecond Opening Switches. 1999, 1999.
Warning: These citations may not always be 100% accurate.