Grekhov I. V. & Mesyats G. A. Gennady Andreyevich. (1999). Physical basis for high power semiconductor nanosecond opening switches; The 12th IEEE International Pulsed Power Conference, Monterey, CA, june 27-30, 1999; Vol. 2. 1999.
Chicago Style (17th ed.) CitationGrekhov I. V. and Mesyats G. A. Gennady Andreyevich. Physical Basis for High Power Semiconductor Nanosecond Opening Switches; The 12th IEEE International Pulsed Power Conference, Monterey, CA, June 27-30, 1999; Vol. 2. 1999, 1999.
MLA (9th ed.) CitationGrekhov I. V. and Mesyats G. A. Gennady Andreyevich. Physical Basis for High Power Semiconductor Nanosecond Opening Switches; The 12th IEEE International Pulsed Power Conference, Monterey, CA, June 27-30, 1999; Vol. 2. 1999, 1999.
Warning: These citations may not always be 100% accurate.