The breakdown strength of two-layer dielectrics; 11th International Symposium on High-Voltage Engineering (ISH 99)

Bibliografske podrobnosti
Parent link:11th International Symposium on High-Voltage Engineering (ISH 99).— 1999.— P. v4-304-v4-307
Drugi avtorji: Lebedev S.M., Gefle O.S., Pokholkov Y. P. Yuri Petrovich, Chichikin V.I.
Izvleček:In paper, experimental results of the breakdown strength study for the two-layer dielectrics under the high electric field are given. The relation between the breakdown strength (Eb) and the boundary position between layers for the two-layer dielectrics is anomalous in character. Similar results for the dissipation factor tan in low and high field were obtained. They suppose that the discovered changes in Eb and tan with the changing are probably caused by the forming peculiarities of the relaxation polarization due to the existence of abrupt step in both the permittivity and conductivity at the boundary between dielectric layers.
В фонде НТБ ТПУ отсутствует
Jezik:angleščina
Izdano: 1999
Teme:
Format: MixedMaterials Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=595520

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200 1 |a The breakdown strength of two-layer dielectrics  |f S.M. Lebedev [et al.] 
330 |a In paper, experimental results of the breakdown strength study for the two-layer dielectrics under the high electric field are given. The relation between the breakdown strength (Eb) and the boundary position between layers for the two-layer dielectrics is anomalous in character. Similar results for the dissipation factor tan in low and high field were obtained. They suppose that the discovered changes in Eb and tan with the changing are probably caused by the forming peculiarities of the relaxation polarization due to the existence of abrupt step in both the permittivity and conductivity at the boundary between dielectric layers. 
333 |a В фонде НТБ ТПУ отсутствует 
463 |t 11th International Symposium on High-Voltage Engineering (ISH 99)  |o Proceedings of the 11th International Symposium on High-Voltage Engineering (London, UK, 23-27 August, 1999). Vol. 4  |v P. v4-304-v4-307  |f Institution of Electrical Engineers  |d 1999  |s IEE conference publications № 467 
610 1 |a труды учёных ТПУ 
701 1 |a Lebedev  |b S.M. 
701 1 |a Gefle  |b O.S. 
701 1 |a Pokholkov  |b Y. P.  |c Russian physicist, electrical engineer, doctor of engineering  |c Rector of the TPU (1990 - 2008), professor  |f 1939-  |g Yuri Petrovich  |3 (RuTPU)RU\TPU\pers\24842 
701 1 |a Chichikin  |b V.I. 
801 1 |a RU  |b 63413507  |c 20091106 
801 2 |a RU  |b 63413507  |c 20091109  |g RCR 
942 |c BK