|
|
|
|
| LEADER |
00000nam0a2200000 4500 |
| 001 |
276127 |
| 005 |
20231101234905.0 |
| 010 |
|
|
|a 3540120912
|
| 035 |
|
|
|a (RuTPU)RU\TPU\book\299385
|
| 090 |
|
|
|a 276127
|
| 100 |
|
|
|a 20141119d1983 k y0engy50 ba
|
| 101 |
0 |
|
|a eng
|
| 102 |
|
|
|a DE
|
| 105 |
|
|
|a a z 001zy
|
| 200 |
1 |
|
|a Narrow-Gap Semiconductors
|f R. Dornhaus, G. Nimtz, B. Schlicht
|
| 210 |
|
|
|a Berlin
|a Heidelberg
|a New York
|a Tokyo
|c Springer-Verlag
|d 1983
|
| 215 |
|
|
|a 309 p.
|c il.
|
| 225 |
1 |
|
|a Springer Tracts in Modern Physics
|v Vol. 98
|
| 320 |
|
|
|a Subject Index: p. 305-309
|
| 606 |
1 |
|
|a Полупроводники
|2 stltpush
|3 (RuTPU)RU\TPU\subj\50553
|9 69206
|
| 610 |
1 |
|
|a электрофизика
|
| 610 |
1 |
|
|a электрофизические исследования
|
| 610 |
1 |
|
|a свойства
|
| 610 |
1 |
|
|a английский язык
|
| 675 |
|
|
|a 537.311.322
|v 3
|
| 700 |
|
1 |
|a Dornhaus
|b R.
|
| 701 |
|
1 |
|a Nimtz
|b G.
|
| 701 |
|
1 |
|a Schlicht
|b B.
|
| 801 |
|
1 |
|a RU
|b 63413507
|c 20141119
|
| 801 |
|
2 |
|a RU
|b 63413507
|c 20170131
|g RCR
|
| 942 |
|
|
|c BK
|
