|
|
|
|
| LEADER |
00000nam0a2200000 4500 |
| 001 |
274652 |
| 005 |
20231101234741.0 |
| 010 |
|
|
|a 3540128077
|
| 035 |
|
|
|a (RuTPU)RU\TPU\book\297862
|
| 090 |
|
|
|a 274652
|
| 100 |
|
|
|a 20141107d1984 k y0engy50 ba
|
| 101 |
0 |
|
|a eng
|
| 102 |
|
|
|a DE
|
| 105 |
|
|
|a a z 001zy
|
| 200 |
1 |
|
|a Nhe Physics of Hydrogenated Amorphous Silicon 1. Structure, Preparation, and Devices
|f edited by J. D. Joannopoulos, G. Lucovsky
|
| 210 |
|
|
|a Berlin
|a Heidelberg
|a New York
|a Tokyo
|c Springer-Verlag
|d 1984
|
| 215 |
|
|
|a 283 p.
|c il.
|
| 225 |
1 |
|
|a Topics in Applied Physics
|v Vol. 55
|
| 320 |
|
|
|a Bibliography at the end of articles
|
| 320 |
|
|
|a Subject Index: p. 285-287
|
| 606 |
1 |
|
|a Кремний
|x Физические основы
|2 stltpush
|3 (RuTPU)RU\TPU\subj\16161
|9 42331
|
| 610 |
1 |
|
|a аморфные полупроводники
|
| 610 |
1 |
|
|a аморфный кремний
|
| 610 |
1 |
|
|a физика
|
| 610 |
1 |
|
|a аморфные полупроводники
|
| 610 |
1 |
|
|a свойства
|
| 610 |
1 |
|
|a гидрогенизационные процессы
|
| 610 |
1 |
|
|a английский язык
|
| 675 |
|
|
|a 621.315.592.002
|v 3
|
| 702 |
|
1 |
|a Joannopoulos
|b J. D.
|4 340
|
| 702 |
|
1 |
|a Lucovsky
|b G.
|4 340
|
| 801 |
|
1 |
|a RU
|b 63413507
|c 20141107
|
| 801 |
|
2 |
|a RU
|b 63413507
|c 20170120
|g RCR
|
| 942 |
|
|
|c BK
|
