High-frequency short-pulsed metal plasma-immersion ion implantation using filtered DC vacuum-arc plasma

Bibliographic Details
Parent link:IFOST 2012: The 7th International Forum on Strategic Techology, September 17-21, 2012, Tomsk.— , 2012
Vol. 2.— 2012.— P. 517-520
Other Authors: Ryabchikov A. I. Aleksandr Ilyich, Stepanov I. B. Igor Borisovich, Sivin D. O. Denis Olegovich, Dektyarev S. V. Sergey Valentinovich, Dodorin K. Yu.
Summary:An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10 ÷ 99% are considered. The regularities of ion implantation and metal plasma deposition for metal samples are theoretically and experimentally investigated. Experimentally has been shown that metal plasma based ion implantation as well as high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition as well as ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, pulse repetition rate smoothly adjusted in the range (2 ÷ 4.4)×105 p.p.s. and pulse duration ranging from 0,5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor has been examined.
Published: 2012
Subjects:
Format: Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=273421

MARC

LEADER 00000naa2a2200000 4500
001 273421
005 20231031230011.0
035 |a (RuTPU)RU\TPU\book\296630 
035 |a RU\TPU\book\293908 
090 |a 273421 
100 |a 20141026d2012 k y0rusy50 ca 
101 0 |a rus 
102 |a RU 
105 |a y z 100zy 
200 1 |a High-frequency short-pulsed metal plasma-immersion ion implantation using filtered DC vacuum-arc plasma  |f A. I. Ryabchikov [et al.]  |h Part 2 
320 |a References: p. 519-520 (27 tit.) 
330 |a An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10 ÷ 99% are considered. The regularities of ion implantation and metal plasma deposition for metal samples are theoretically and experimentally investigated. Experimentally has been shown that metal plasma based ion implantation as well as high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition as well as ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, pulse repetition rate smoothly adjusted in the range (2 ÷ 4.4)×105 p.p.s. and pulse duration ranging from 0,5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor has been examined. 
461 1 |0 (RuTPU)RU\TPU\book\270770  |t IFOST 2012  |o The 7th International Forum on Strategic Techology, September 17-21, 2012, Tomsk  |d 2012 
463 1 |0 (RuTPU)RU\TPU\book\269459  |t Vol. 2  |v P. 517-520  |d 2012  |p 627 p. 
610 1 |a труды учёных ТПУ 
701 1 |a Ryabchikov  |b A. I.  |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences  |c physicist  |f 1950-  |g Aleksandr Ilyich  |2 stltpush  |3 (RuTPU)RU\TPU\pers\30912 
701 1 |a Stepanov  |b I. B.  |c physicist  |c Head of the laboratory of Tomsk Polytechnic University, Doctor of technical sciences  |f 1968-  |g Igor Borisovich  |2 stltpush  |3 (RuTPU)RU\TPU\pers\34218 
701 1 |a Sivin  |b D. O.  |c physicist  |c Senior researcher of Tomsk Polytechnic University, Candidate of technical sciences  |f 1978-  |g Denis Olegovich  |2 stltpush  |3 (RuTPU)RU\TPU\pers\34240 
701 1 |a Dektyarev  |b S. V.  |c physicist  |c design engineer of Tomsk Polytechnic University  |f 1957-  |g Sergey Valentinovich  |2 stltpush  |3 (RuTPU)RU\TPU\pers\35672 
701 1 |a Dodorin  |b K. Yu. 
801 1 |a RU  |b 63413507  |c 20141001 
801 2 |a RU  |b 63413507  |c 20160630  |g RCR 
942 |c BK