Mass transfer of an implanted dopant in materials under high-power pulsed Ion beam impact; 7th International Conference on Modification of Materials with Particle Beams and Plasma Flows (Tomsk, Russia, 25-30 July 2004)
| Parent link: | 7th International Conference on Modification of Materials with Particle Beams and Plasma Flows (Tomsk, Russia, 25-30 July 2004).— 2004.— Р. 346-347 |
|---|---|
| Tác giả khác: | Petrov A. V., Polkovnikova N. M, Ryabchikov A. I. Aleksandr Ilyich, Sokhoreva V. V., Struts V. K., Usov Y. P. Yuri Petrovich, Shulepov I. A. Ivan Anisimovich |
| Tóm tắt: | The results of experimental studies of the mass transfer features in Ti-Si and Ti-Fe systems during repeated alternate processes of Ti ion implantation and irradiation with a high-power ion beam are presented for ion beam energy densities of ≤ 2 J/cm2. The analysis of the final state of samples surface after the combined treatment is carried out. |
| Ngôn ngữ: | Tiếng Anh |
| Được phát hành: |
2004
|
| Những chủ đề: | |
| Định dạng: | Chương của sách |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=239764 |
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