Mass transfer of an implanted dopant in materials under high-power pulsed Ion beam impact

Mass transfer of an implanted dopant in materials under high-power pulsed Ion beam impact

Detalles Bibliográficos
Parent link:	7th International Conference on Modification of Materials with Particle Beams and Plasma Flows (Tomsk, Russia, 25-30 July 2004): proceedings/ Tomsk Polytechnic University (TPU) ; ed. S. Korovin, A. Ryabchikov. Р. 346-347.— , 2004.— 5-94458-042-9
Outros autores:	Petrov A. V., Polkovnikova N. M, Ryabchikov A. I. Aleksandr Ilyich, Sokhoreva V. V., Struts V. K., Usov Y. P. Yuri Petrovich, Shulepov I. A. Ivan Anisimovich
Summary:	The results of experimental studies of the mass transfer features in Ti-Si and Ti-Fe systems during repeated alternate processes of Ti ion implantation and irradiation with a high-power ion beam are presented for ion beam energy densities of ≤ 2 J/cm2. The analysis of the final state of samples surface after the combined treatment is carried out.
Publicado:	2004
Subjects:	труды учёных ТПУ
Formato:	Capítulo de libro
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=239764

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