Electronic Building and Properties of Aluminum Nitride Irradiated with Ions

Xehetasun bibliografikoak
Parent link:7 International conference on modification of materials with particle beams and plasma flows: Tomsk, Russia, 25-29 July 2004/ edited by S. Korovin, A. Ryabchikov. [P. 189-192].— , 2004
Egile nagusia: Kabyshev A. V. Alexander Vasilievich
Beste egile batzuk: Konusov F. V. Fedor Valerievich
Gaia:Title from the title-page.
The parameters of electronic structure and their influence on properties of aluminum nitride after irradiation with carbon ions and subsequent annealing in vacuum and oxygen were investigated using optical absorption and photoconduction. The influence of annealing conditions on the dominating charge carriers type and on the Fermi level position and on the character of the electronic transitions between the states localized within the forbidden band and the allowed bands were established.
Режим доступа: из корпоративной сети ТПУ
Text files
Argitaratua: 2004
Saila:Fundamentals of modification processes
Gaiak:
Sarrera elektronikoa:http://www.lib.tpu.ru/fulltext2/c/2004/C13/038.pdf
Formatua: Baliabide elektronikoa Liburu kapitulua
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=232033

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