Electronic Building and Properties of Aluminum Nitride Irradiated with Ions; 7 International conference on modification of materials with particle beams and plasma flows
| Parent link: | 7 International conference on modification of materials with particle beams and plasma flows.— 2004.— [P. 189-192] |
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| المؤلف الرئيسي: | |
| مؤلفون آخرون: | |
| الملخص: | Title from the title-page. The parameters of electronic structure and their influence on properties of aluminum nitride after irradiation with carbon ions and subsequent annealing in vacuum and oxygen were investigated using optical absorption and photoconduction. The influence of annealing conditions on the dominating charge carriers type and on the Fermi level position and on the character of the electronic transitions between the states localized within the forbidden band and the allowed bands were established. Режим доступа: из корпоративной сети ТПУ Text files |
| اللغة: | الإنجليزية |
| منشور في: |
2004
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| سلاسل: | Fundamentals of modification processes |
| الموضوعات: | |
| الوصول للمادة أونلاين: | http://www.lib.tpu.ru/fulltext2/c/2004/C13/038.pdf |
| التنسيق: | الكتروني فصل الكتاب |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=232033 |