Electronic Building and Properties of Aluminum Nitride Irradiated with Ions; 7 International conference on modification of materials with particle beams and plasma flows
| Parent link: | 7 International conference on modification of materials with particle beams and plasma flows.— 2004.— [P. 189-192] |
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| Auteur principal: | |
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| Résumé: | Title from the title-page. The parameters of electronic structure and their influence on properties of aluminum nitride after irradiation with carbon ions and subsequent annealing in vacuum and oxygen were investigated using optical absorption and photoconduction. The influence of annealing conditions on the dominating charge carriers type and on the Fermi level position and on the character of the electronic transitions between the states localized within the forbidden band and the allowed bands were established. Режим доступа: из корпоративной сети ТПУ Text files |
| Langue: | anglais |
| Publié: |
2004
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| Collection: | Fundamentals of modification processes |
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| Accès en ligne: | http://www.lib.tpu.ru/fulltext2/c/2004/C13/038.pdf |
| Format: | Électronique Chapitre de livre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=232033 |
MARC
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| 200 | 1 | |a Electronic Building and Properties of Aluminum Nitride Irradiated with Ions |f A. V. Kabyshev, F. V. Konusov | |
| 203 | |a Text |c electronic | ||
| 225 | 1 | |a Fundamentals of modification processes | |
| 300 | |a Title from the title-page. | ||
| 320 | |a [References: p. 192 (16 tit.)] | ||
| 330 | |a The parameters of electronic structure and their influence on properties of aluminum nitride after irradiation with carbon ions and subsequent annealing in vacuum and oxygen were investigated using optical absorption and photoconduction. The influence of annealing conditions on the dominating charge carriers type and on the Fermi level position and on the character of the electronic transitions between the states localized within the forbidden band and the allowed bands were established. | ||
| 333 | |a Режим доступа: из корпоративной сети ТПУ | ||
| 336 | |a Text files | ||
| 337 | |a Adobe Reader | ||
| 463 | 1 | |0 (RuTPU)RU\TPU\book\75459 |t 7 International conference on modification of materials with particle beams and plasma flows |o Tomsk, Russia, 25-29 July 2004 |f edited by S. Korovin, A. Ryabchikov |v [P. 189-192] |d 2004 |p 1 Multimedia CD-ROM | |
| 610 | 1 | |a физика | |
| 610 | 1 | |a нитрид алюминия | |
| 610 | 1 | |a электронные структуры | |
| 610 | 1 | |a свойства | |
| 610 | 1 | |a фотопроводимость | |
| 610 | 1 | |a оптическое поглощение | |
| 610 | 1 | |a облучение | |
| 610 | 1 | |a уровни Ферми | |
| 610 | 1 | |a электронные переходы | |
| 610 | 1 | |a отжиг | |
| 610 | 1 | |a носители заряда | |
| 610 | 1 | |a заряды | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a электронный ресурс | |
| 700 | 1 | |a Kabyshev |b A. V. |c specialist in the field of electric power engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1958- |g Alexander Vasilievich |3 (RuTPU)RU\TPU\pers\32572 | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |y Tomsk |3 (RuTPU)RU\TPU\pers\32570 |9 16491 | |
| 801 | 1 | |a RU |b 63413507 |c 20120118 | |
| 801 | 2 | |a RU |b 63413507 |c 20161229 |g RCR | |
| 856 | 4 | |u http://www.lib.tpu.ru/fulltext2/c/2004/C13/038.pdf | |
| 942 | |c CF | ||