High-Frequency Short-Pulsed Metal Plasma-Immersion Ion Implantation Using Filtered DC Vacuum-Arc Plasma (Part II); 7 International conference on modification of materials with particle beams and plasma flows
| Parent link: | 7 International conference on modification of materials with particle beams and plasma flows.— 2004.— [P. 138-141] |
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| Autore principale: | |
| Altri autori: | , |
| Riassunto: | Title from the title-page. An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10÷99% are considered. The regularities of ion implantation and metal plasma deposition for metal samples are theoretically and experimentally investigated. Experimentally has been shown that metal plasma based ion implantation as well as high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition as well as ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, pulse repetition rate smoothly adjusted in the range (2÷4.4)⋅105 pps and pulse duration ranging from 0.5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor has been examined. Режим доступа: из корпоративной сети ТПУ Text files |
| Lingua: | inglese |
| Pubblicazione: |
2004
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| Serie: | Fundamentals of modification processes |
| Soggetti: | |
| Accesso online: | http://www.lib.tpu.ru/fulltext2/c/2004/C13/036.pdf |
| Natura: | Elettronico Capitolo di libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=232027 |
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| 200 | 1 | |a High-Frequency Short-Pulsed Metal Plasma-Immersion Ion Implantation Using Filtered DC Vacuum-Arc Plasma (Part II) |b Electronic resource |f A. I. Ryabchikov, I. A. Ryabchikov, I. B. Stepanov | |
| 203 | |a Text |c electronic | ||
| 225 | 1 | |a Fundamentals of modification processes | |
| 230 | |a Electronic text data (1 file : 192 Kb) | ||
| 300 | |a Title from the title-page. | ||
| 320 | |a [References: p. 141 (27 tit.)] | ||
| 330 | |a An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10÷99% are considered. The regularities of ion implantation and metal plasma deposition for metal samples are theoretically and experimentally investigated. Experimentally has been shown that metal plasma based ion implantation as well as high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition as well as ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, pulse repetition rate smoothly adjusted in the range (2÷4.4)⋅105 pps and pulse duration ranging from 0.5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor has been examined. | ||
| 333 | |a Режим доступа: из корпоративной сети ТПУ | ||
| 336 | |a Text files | ||
| 337 | |a Adobe Reader | ||
| 463 | 1 | |0 (RuTPU)RU\TPU\book\75459 |t 7 International conference on modification of materials with particle beams and plasma flows |o Tomsk, Russia, 25-29 July 2004 |f edited by S. Korovin, A. Ryabchikov |v [P. 138-141] |d 2004 |p 1 Multimedia CD-ROM | |
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| 700 | 1 | |a Ryabchikov |b A. I. |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |c physicist |f 1950- |g Aleksandr Ilyich |2 stltpush |3 (RuTPU)RU\TPU\pers\30912 | |
| 701 | 1 | |a Ryabchikov |b I. A. | |
| 701 | 1 | |a Stepanov |b I. B. |c physicist |c Head of the laboratory of Tomsk Polytechnic University, Doctor of technical sciences |f 1968- |g Igor Borisovich |2 stltpush |3 (RuTPU)RU\TPU\pers\34218 | |
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