High-Frequency Short-Pulsed Metal Plasma-Immersion Ion Implantation Using Filtered DC Vacuum-Arc Plasma (Part I)

Detaylı Bibliyografya
Parent link:7 International conference on modification of materials with particle beams and plasma flows.— 2004.— [P. 134-137]
Yazar: Ryabchikov A. I. Aleksandr Ilyich
Diğer Yazarlar: Ryabchikov I. A., Stepanov I. B. Igor Borisovich
Özet:References see the second part of the paper.
Title from the title-page.
An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10÷99% are considered. The regularities of ion implantation and metal plasma deposition for metal samples are theoretically and experimentally investigated. Experimentally has been shown that metal plasma based ion implantation as well as high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition as well as ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, pulse repetition rate smoothly adjusted in the range (2÷4.4)⋅105 pps and pulse duration ranging from 0.5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor has been examined.
Режим доступа: из корпоративной сети ТПУ
Text files
Dil:İngilizce
Baskı/Yayın Bilgisi: 2004
Seri Bilgileri:Fundamentals of modification processes
Konular:
Online Erişim:http://www.lib.tpu.ru/fulltext2/c/2004/C13/035.pdf
Materyal Türü: Elektronik Kitap Bölümü
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=231969

MARC

LEADER 00000nla2a2200000 4500
001 231969
005 20231031203000.0
035 |a (RuTPU)RU\TPU\book\252999 
035 |a RU\TPU\book\252997 
090 |a 231969 
100 |a 20130207d2004 k y0engy50 ba 
101 0 |a eng 
102 |a RU 
105 |a y z 100zy 
135 |a drnn ---uucaa 
200 1 |a High-Frequency Short-Pulsed Metal Plasma-Immersion Ion Implantation Using Filtered DC Vacuum-Arc Plasma (Part I)  |b Electronic resource  |f A. I. Ryabchikov, I. A. Ryabchikov, I. B. Stepanov 
203 |a Text  |c electronic 
225 1 |a Fundamentals of modification processes 
230 |a Electronic text data (1 file : 213 Kb) 
300 |a References see the second part of the paper. 
300 |a Title from the title-page. 
330 |a An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10÷99% are considered. The regularities of ion implantation and metal plasma deposition for metal samples are theoretically and experimentally investigated. Experimentally has been shown that metal plasma based ion implantation as well as high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition as well as ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, pulse repetition rate smoothly adjusted in the range (2÷4.4)⋅105 pps and pulse duration ranging from 0.5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor has been examined. 
333 |a Режим доступа: из корпоративной сети ТПУ 
336 |a Text files 
337 |a Adobe Reader 
463 1 |0 (RuTPU)RU\TPU\book\75459  |t 7 International conference on modification of materials with particle beams and plasma flows  |o Tomsk, Russia, 25-29 July 2004  |f edited by S. Korovin, A. Ryabchikov  |v [P. 134-137]  |d 2004  |p 1 Multimedia CD-ROM 
610 1 |a физика 
610 1 |a плазма 
610 1 |a металлы 
610 1 |a осаждение 
610 1 |a ионная имплантация 
610 1 |a металлическая плазма 
610 1 |a ионное распыление 
610 1 |a импульсы 
610 1 |a труды учёных ТПУ 
610 1 |a электронный ресурс 
700 1 |a Ryabchikov  |b A. I.  |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences  |c physicist  |f 1950-  |g Aleksandr Ilyich  |2 stltpush  |3 (RuTPU)RU\TPU\pers\30912 
701 1 |a Ryabchikov  |b I. A. 
701 1 |a Stepanov  |b I. B.  |c physicist  |c Head of the laboratory of Tomsk Polytechnic University, Doctor of technical sciences  |f 1968-  |g Igor Borisovich  |2 stltpush  |3 (RuTPU)RU\TPU\pers\34218 
801 1 |a RU  |b 63413507  |c 20120118 
801 2 |a RU  |b 63413507  |c 20161229  |g RCR 
856 4 |u http://www.lib.tpu.ru/fulltext2/c/2004/C13/035.pdf 
942 |c CF