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|a eng
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|a RU
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1 |
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|a Dielectric properties of boron nitride after high temperature implantation with ions
|f A. V. Kabyshev [et al.]
|
| 320 |
|
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|a References: 9 tit.
|
| 461 |
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1 |
|0 (RuTPU)RU\TPU\book\73635
|t Korus 2004
|o the 8th Korea-Russia International Symposium on Science and Technology, June 26 - July 3, 2004, At Tomsk Politechnic University, Russia
|o proceedings
|f Novosibirsk State Technical University; Tomsk Polytechnic University
|d 2004-
|
| 463 |
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1 |
|0 (RuTPU)RU\TPU\book\73150
|t Vol. 3
|v P. 113-116
|d 2004
|p 365 p.
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| 610 |
1 |
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|a труды учёных ТПУ
|
| 701 |
|
1 |
|a Kabyshev
|b A. V.
|c specialist in the field of electric power engineering
|c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences
|f 1958-
|g Alexander Vasilievich
|3 (RuTPU)RU\TPU\pers\32572
|
| 701 |
|
1 |
|a Konusov
|b F. V.
|c physicist
|c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences
|f 1958-
|g Fedor Valerievich
|y Tomsk
|3 (RuTPU)RU\TPU\pers\32570
|9 16491
|
| 701 |
|
1 |
|a Lopatin
|b V. V.
|c Doctor of physical and mathematical sciences
|c Professor of Tomsk Polytechnic University (TPU)
|f 1947-
|g Vladimir Vasilyevich
|3 (RuTPU)RU\TPU\pers\30091
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| 701 |
|
1 |
|a Krivosheeva
|b N. V.
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