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20231031201131.0 |
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|a (RuTPU)RU\TPU\book\246629
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| 035 |
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|a RU\TPU\tpu\19468
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|a 226259
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|a 20121120d2010 k y0engy50 ba
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| 101 |
1 |
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|a eng
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| 102 |
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|a RU
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| 200 |
1 |
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|a High-frequency short-pulse bias potential as a universal method of Ion-beam and plasma treatment of conductive and dielectric materials using vacuum-arc and ablation plasma
|f A. I. Ryabchikov [et al.]
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| 320 |
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|a References: p. 127 (27 tit.)
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| 330 |
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|a The results of investigations of applicability of the method of high-frequency short-pulsedplasma-immersion ion implantation and (or) coating deposition using vacuum-arc and ablationplasma to conductive and dielectric substrates are presented. It is shown that ion implantation with the ion sputtering compensation by coating deposition from plasma and ion-assisted coating deposition can be realized for the metal and dielectric samples through alteration of the negative bias potential within 0-4 ⋅ 103 V, with the pulse repetition rate of (1-4.4) ⋅ 105 pps, pulse duration 0.5-2 μs and duty factor of 0.1-0.9. It is experimentally established that at coating deposition from ablation plasma obtained by the influence of the high-intensity ion beam (j = 3 ⋅ 102 A/m2, E = 350 keV, τ = 90 ns) on the target, the micro-arc effects on the substrate surface are observed at a dc bias potential of more than -60 V. The transition to pulses of 0.5 μs duration enabled to increase the bias potential up to -4 kV. The possibility of application of the high-frequency, short-pulse bias potentials for the formation of coatings from vacuum-arc and blation plasma with high adhesive strength and improved exploitation characteristics is discussed
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| 463 |
|
1 |
|0 (RuTPU)RU\TPU\book\229499
|y 978-5-94458-112-9
|t 10th International Conference on Modification of Materials with Particle Beams and Plasma Flows, Tomsk, 19-24 September 2010
|o proceedings
|f Tomsk Polytechnic University (TPU) ; Institute of High Current Electronics SB RAS ; High voltage research institute Tomsk Polytechnic University ; Nuclear Physics institute Tomsk Polytechnic University
|v P. 124-127
|d 2010
|p 782 p.
|
| 610 |
1 |
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|a труды учёных ТПУ
|
| 701 |
|
1 |
|a Ryabchikov
|b A. I.
|c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences
|c physicist
|f 1950-
|g Aleksandr Ilyich
|2 stltpush
|3 (RuTPU)RU\TPU\pers\30912
|
| 701 |
|
1 |
|a Stepanov
|b I. B.
|c physicist
|c Head of the laboratory of Tomsk Polytechnic University, Doctor of technical sciences
|f 1968-
|g Igor Borisovich
|2 stltpush
|3 (RuTPU)RU\TPU\pers\34218
|
| 701 |
|
1 |
|a Sivin
|b D. O.
|c physicist
|c Senior researcher of Tomsk Polytechnic University, Candidate of technical sciences
|f 1978-
|g Denis Olegovich
|2 stltpush
|3 (RuTPU)RU\TPU\pers\34240
|
| 701 |
|
1 |
|a Shulepov
|b I. A.
|c physicist
|c Engineer-designer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences
|f 1954-
|g Ivan Anisimovich
|2 stltpush
|3 (RuTPU)RU\TPU\pers\33092
|
| 801 |
|
0 |
|a RU
|b 63413507
|c 20011210
|g PSBO
|
| 801 |
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2 |
|a RU
|b 63413507
|c 20160630
|g PSBO
|
| 942 |
|
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|c BK
|
