High-Current Subnanosecond Switching by Semiconductor Devices for Pulsed Power Applications; 1-st International Congress on Radiation Physics, High Current Electronics, and Modification of Materials; Vol. 2: 12-th Simposium on High Current Electronics

High-Current Subnanosecond Switching by Semiconductor Devices for Pulsed Power Applications; 1-st International Congress on Radiation Physics, High Current Electronics, and Modification of Materials; Vol. 2: 12-th Simposium on High Current Electronics

Détails bibliographiques
Parent link:	1-st International Congress on Radiation Physics, High Current Electronics, and Modification of Materials: proceedings, Tomsk, Russia, 24-29 September 2000/ 1-st International Congress on Radiation Physics, High Current Electronics, and Modification of Materials ; Tomsk Polytechnic University (TPU).— , 2000 Vol. 2: 12-th Simposium on High Current Electronics.— 2000.— P. 235-239
Autres auteurs:	Rukin S. N., Darznek S. A., Lyubutin S. K., Mesyats G. A. Gennady Andreyevich, Slovikovskii B. G., Tsyranov S. N.
Langue:	anglais
Publié:	2000
Sujets:	труды учёных ТПУ
Format:	Chapitre de livre
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=199547

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