|
|
|
|
| LEADER |
00000naa2a2200000 4500 |
| 001 |
199545 |
| 005 |
20231031184341.0 |
| 035 |
|
|
|a (RuTPU)RU\TPU\book\217579
|
| 090 |
|
|
|a 199545
|
| 100 |
|
|
|a 20110815d2000 k y0engy50 ba
|
| 101 |
0 |
|
|a eng
|
| 102 |
|
|
|a RU
|
| 200 |
1 |
|
|a Semiconductor Pulsed-Power Electronics
|f G. A. Mesyats
|
| 320 |
|
|
|a References: p. 17-18 (6 tit.)
|
| 461 |
|
0 |
|0 (RuTPU)RU\TPU\book\23311
|t 1-st International Congress on Radiation Physics, High Current Electronics, and Modification of Materials
|o proceedings, Tomsk, Russia, 24-29 September 2000
|f 1-st International Congress on Radiation Physics, High Current Electronics, and Modification of Materials ; Tomsk Polytechnic University (TPU)
|d 2000
|
| 463 |
|
0 |
|0 (RuTPU)RU\TPU\book\23312
|t Vol. 2: 12-th Simposium on High Current Electronics
|f ed. by G. Mesyats, B. Kovalchuk, G. Remnev
|v P. 17-18
|d 2000
|p 544 p.
|
| 610 |
1 |
|
|a труды учёных ТПУ
|
| 700 |
|
1 |
|a Mesyats
|b G. A.
|c russian physicist
|c academican, vice-president of RAS
|c graduate of Tomsk Polytechnic Institute
|f 1936-
|g Gennady Andreyevich
|2 stltpush
|3 (RuTPU)RU\TPU\pers\28088
|
| 801 |
|
1 |
|a RU
|b 63413507
|c 20110815
|
| 801 |
|
2 |
|a RU
|b 63413507
|c 20111012
|g RCR
|
| 942 |
|
|
|c BK
|