Modeling of attenuator structures on field effect transistors with minimal phase shift at attenuation regulation; Bulletin of the Tomsk Polytechnic University; Vol. 311, № 4 : Power engineering

Bibliografiske detaljer
Parent link:Bulletin of the Tomsk Polytechnic University/ Tomsk Polytechnic University (TPU).— , 2006-2007
Vol. 311, № 4 : Power engineering.— 2007.— [P. 90-93]
Hovedforfatter: Stukach O. V. Oleg Vladimirovich
Summary:Заглавие с титульного листа
Электронная версия печатной публикации
Controlled absorbing attenuators on Schottky-gate FETs: T-circuit, T-shaped bridge circuit and transistor attenuator in the mode with controlled slope of voltage-current characteristic have been considered. Attenuator phase-frequency characteristics were modeled. The main difference of the circuits from the known ones consists in introduction of equalizers that conditions broadband feature and large attenuation range where minimum of the phase shift is achieved at regulation. As a result, the optimal parameters of adjusting circuits in attenuators are founded. It is shown that the least phase shift is provided in attenuators on transistor with controlled volt-ampere characteristic steepness. The comparative estimation of the considered base structures was given.
Sprog:engelsk
Udgivet: 2007
Serier:Power engineering
Fag:
Online adgang:http://www.lib.tpu.ru/fulltext/v/Bulletin_TPU/2007/v311eng/i4/21.pdf
Format: Electronisk Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=194357

MARC

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320 |a [Bibliography: p. 93 (3 titles)] 
330 |a Controlled absorbing attenuators on Schottky-gate FETs: T-circuit, T-shaped bridge circuit and transistor attenuator in the mode with controlled slope of voltage-current characteristic have been considered. Attenuator phase-frequency characteristics were modeled. The main difference of the circuits from the known ones consists in introduction of equalizers that conditions broadband feature and large attenuation range where minimum of the phase shift is achieved at regulation. As a result, the optimal parameters of adjusting circuits in attenuators are founded. It is shown that the least phase shift is provided in attenuators on transistor with controlled volt-ampere characteristic steepness. The comparative estimation of the considered base structures was given. 
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610 1 |a modelling 
610 1 |a attenuators 
610 1 |a FETs 
610 1 |a phase shifts 
610 1 |a Schottky-gate 
610 1 |a bridge circuits 
610 1 |a voltage-current characteristic 
610 1 |a phase-frequency characteristics 
610 1 |a correction circuits 
610 1 |a broadband 
610 1 |a attenuation 
610 1 |a optimal parameters 
610 1 |a comparative estimation 
610 1 |a base structures 
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