Passivation of metal nanopowders obtained by electric explosion of semiconductors

Xehetasun bibliografikoak
Parent link:	Bulletin of the Tomsk Polytechnic University/ Tomsk Polytechnic University (TPU).— , 2006-2007 Vol. 310, № 2.— 2007.— [P. 122-126]
Egile nagusia:	Lerner M. I. Marat Izrailyevich
Beste egile batzuk:	Shimanskiy V. V., Saveliev G. G.
Gaia:	Заглавие с титульного листа Электронная версия печатной публикации The influence of composition and gas flow rate at passivation on content of unoxidized metal, particle size and temperature on the metal nanopowder layer obtained by the method of semiconductor electric explosion has been studied. It is shown that the time of forced passivation can be tens times less in comparison with passivation at spontaneous gas diffusion in powder layer.
Hizkuntza:	ingelesa
Argitaratua:	2007
Saila:	Chemistry
Gaiak:	passivation nanopowders electric explosion semiconductors compositions gas flow unoxidized metals diffusion труды учёных ТПУ электронный ресурс
Sarrera elektronikoa:	http://www.lib.tpu.ru/fulltext/v/Bulletin_TPU/2007/v310eng/i2/29.pdf
Formatua:	Baliabide elektronikoa Liburu kapitulua
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=181852

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Gaia:	Заглавие с титульного листа Электронная версия печатной публикации The influence of composition and gas flow rate at passivation on content of unoxidized metal, particle size and temperature on the metal nanopowder layer obtained by the method of semiconductor electric explosion has been studied. It is shown that the time of forced passivation can be tens times less in comparison with passivation at spontaneous gas diffusion in powder layer.

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