Optimization of limiting modes of streamer semiconductor laser; Bulletin of the Tomsk Polytechnic University; Vol. 310, № 1

Optimization of limiting modes of streamer semiconductor laser; Bulletin of the Tomsk Polytechnic University; Vol. 310, № 1

Chi tiết về thư mục
Parent link:	Bulletin of the Tomsk Polytechnic University/ Tomsk Polytechnic University (TPU).— , 2006-2007 Vol. 310, № 1.— 2007.— [P. 78-81]
Tác giả chính:	Parashchyk V. V.
Tác giả khác:	Rusakov К. I., Dzhabbarov R. B.
Tóm tắt:	Заглавие с титульного листа Электронная версия печатной публикации The influence of intensive electric and optical fields produced by streamer discharge in wide-gap semiconductor on their spectroscopic properties has been studied. The given effect is developed at appearance of reversed reconstruction of active environment luminescent characteristics. The methods of sufficient increase in durability and efficiency of streamer laser at limiting modes based on application of semiconductor protecting layers of a definite crystallographic orientation and crystal microrelief with element size of light wave length order. Streamer luminescence in new perspective CaGa2S4:Eu, Ca4Ga2S7:Eu compounds is found and studied.
Ngôn ngữ:	Tiếng Anh
Được phát hành:	2007
Loạt:	Mathematics and mechanics. Physics
Những chủ đề:	optimization limiting modes streamer lasers semiconductor lasers electric fields optical fields streamer discharges wide-gap semiconductors spectroscopic properties reconstruction luminescent characteristics active environment semiconductor layers protecting layers crystallographic orientation crystal microrelief wave length light streamer luminescence compounds электронный ресурс
Truy cập trực tuyến:	http://www.lib.tpu.ru/fulltext/v/Bulletin_TPU/2007/v310eng/i1/19.pdf
Định dạng:	Điện tử Chương của sách
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=180645

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