Optimization of limiting modes of streamer semiconductor laser; Bulletin of the Tomsk Polytechnic University; Vol. 310, № 1

書誌詳細
Parent link:Bulletin of the Tomsk Polytechnic University/ Tomsk Polytechnic University (TPU).— , 2006-2007
Vol. 310, № 1.— 2007.— [P. 78-81]
第一著者: Parashchyk V. V.
その他の著者: Rusakov К. I., Dzhabbarov R. B.
要約:Заглавие с титульного листа
Электронная версия печатной публикации
The influence of intensive electric and optical fields produced by streamer discharge in wide-gap semiconductor on their spectroscopic properties has been studied. The given effect is developed at appearance of reversed reconstruction of active environment luminescent characteristics. The methods of sufficient increase in durability and efficiency of streamer laser at limiting modes based on application of semiconductor protecting layers of a definite crystallographic orientation and crystal microrelief with element size of light wave length order. Streamer luminescence in new perspective CaGa2S4:Eu, Ca4Ga2S7:Eu compounds is found and studied.
言語:英語
出版事項: 2007
シリーズ:Mathematics and mechanics. Physics
主題:
オンライン・アクセス:http://www.lib.tpu.ru/fulltext/v/Bulletin_TPU/2007/v310eng/i1/19.pdf
フォーマット: 電子媒体 図書の章
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=180645

MARC

LEADER 00000nla2a2200000 4500
001 180645
005 20231031170835.0
035 |a (RuTPU)RU\TPU\book\195822 
035 |a RU\TPU\book\195821 
090 |a 180645 
100 |a 20100522d2007 k y0rusy50 ca 
101 1 |a eng  |c rus 
102 |a RU 
135 |a drnn ---uucaa 
200 1 |a Optimization of limiting modes of streamer semiconductor laser  |b Electronic resource  |f V. V. Parashchyk, К. I. Rusakov, R. B. Dzhabbarov 
203 |a Text  |c electronic 
215 |a 1 файл (310 Кб) 
225 1 |a Mathematics and mechanics. Physics 
230 |a Электронные текстовые данные (1 файл : 310 Кб) 
300 |a Заглавие с титульного листа 
300 |a Электронная версия печатной публикации 
320 |a [Bibliography: p. 81 (11 titles)] 
330 |a The influence of intensive electric and optical fields produced by streamer discharge in wide-gap semiconductor on their spectroscopic properties has been studied. The given effect is developed at appearance of reversed reconstruction of active environment luminescent characteristics. The methods of sufficient increase in durability and efficiency of streamer laser at limiting modes based on application of semiconductor protecting layers of a definite crystallographic orientation and crystal microrelief with element size of light wave length order. Streamer luminescence in new perspective CaGa2S4:Eu, Ca4Ga2S7:Eu compounds is found and studied. 
337 |a Adobe Reader 
461 1 |0 (RuTPU)RU\TPU\book\169973  |t Bulletin of the Tomsk Polytechnic University  |f Tomsk Polytechnic University (TPU)  |d 2006-2007 
463 1 |0 (RuTPU)RU\TPU\book\195457  |t Vol. 310, № 1  |v [P. 78-81]  |d 2007  |p 201 p. 
610 1 |a optimization 
610 1 |a limiting modes 
610 1 |a streamer lasers 
610 1 |a semiconductor lasers 
610 1 |a electric fields 
610 1 |a optical fields 
610 1 |a streamer discharges 
610 1 |a wide-gap semiconductors 
610 1 |a spectroscopic properties 
610 1 |a reconstruction 
610 1 |a luminescent characteristics 
610 1 |a active environment 
610 1 |a semiconductor layers 
610 1 |a protecting layers 
610 1 |a crystallographic orientation 
610 1 |a crystal microrelief 
610 1 |a wave length 
610 1 |a light 
610 1 |a streamer luminescence 
610 1 |a compounds 
610 1 |a электронный ресурс 
675 |a 621.315.592  |v 3 
700 1 |a Parashchyk  |b V. V. 
701 1 |a Rusakov  |b К. I. 
701 1 |a Dzhabbarov  |b R. B. 
801 1 |a RU  |b 63413507  |c 20090623  |g PSBO 
801 2 |a RU  |b 63413507  |c 20110331  |g PSBO 
856 4 |u http://www.lib.tpu.ru/fulltext/v/Bulletin_TPU/2007/v310eng/i1/19.pdf 
942 |c CF