Study of barrier effect in dielectrics

Bibliographic Details
Parent link:1-st International Congress on Radiation Physics, High Current Electronics, and Modification of Materials: proceedings, Tomsk, Russia, 24-29 September 2000/ Tomsk Polytechnic University (TPU).— , 2000
Vol. 1: 11-th International Conference on Radiation Physics and Chemistry of Condensed Matter.— 2000.— P. 361-366
Main Author: Lebedev S. M. Sergey Mikhailovich
Other Authors: Gefle O. S. Olga Semenovna, Pokholkov Y. P. Yuri Petrovich
Summary:The results of the barrier effect study in gaseous and solid dielectrics in divergent and quasi-uniform electric fields are presented in this paper. The influence of various factors such as the position of the barrier in gap, the change of permittivity and conductivity either on the breakdown voltage and breakdown time in the quasi-uniform field or on the tree-initiation time in the divergent field was investigated. Application of barriers with high permittivity may result in a significant increase in breakdown voltage and breakdown time. An analysis of existing models of the barrier effect is presented
Language:English
Published: 2000
Subjects:
Format: Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=170248

MARC

LEADER 00000n a2a2200000 4500
001 170248
005 20231031163652.0
035 |a (RuTPU)RU\TPU\book\184639 
090 |a 170248 
100 |a 20091120d2000 k y0engy50 ca 
101 0 |a eng 
102 |a RU 
200 1 |a Study of barrier effect in dielectrics  |f S. M. Lebedev, O. S. Gefle, Y. P. Pokholkov 
320 |a References: p. 366 (15 titles) 
330 |a The results of the barrier effect study in gaseous and solid dielectrics in divergent and quasi-uniform electric fields are presented in this paper. The influence of various factors such as the position of the barrier in gap, the change of permittivity and conductivity either on the breakdown voltage and breakdown time in the quasi-uniform field or on the tree-initiation time in the divergent field was investigated. Application of barriers with high permittivity may result in a significant increase in breakdown voltage and breakdown time. An analysis of existing models of the barrier effect is presented 
461 0 |0 (RuTPU)RU\TPU\book\23311  |t 1-st International Congress on Radiation Physics, High Current Electronics, and Modification of Materials  |o proceedings, Tomsk, Russia, 24-29 September 2000  |f Tomsk Polytechnic University (TPU)  |d 2000 
463 0 |0 (RuTPU)RU\TPU\book\23310  |t Vol. 1: 11-th International Conference on Radiation Physics and Chemistry of Condensed Matter  |f ed. by D. Vaisburd  |v P. 361-366  |d 2000  |p 472 p. 
610 1 |a труды учёных ТПУ 
700 1 |a Lebedev  |b S. M.  |c physicist  |c Head of the laboratory of Tomsk Polytechnic University, Doctor of technical sciences  |f 1954-  |g Sergey Mikhailovich  |2 stltpush  |3 (RuTPU)RU\TPU\pers\34631 
701 1 |a Gefle  |b O. S.  |c physicist  |c Senior researcher of Tomsk Polytechnic University, Candidate of technical sciences  |f 1947-  |g Olga Semenovna  |2 stltpush  |3 (RuTPU)RU\TPU\pers\33671 
701 1 |a Pokholkov  |b Y. P.  |c Russian electrical engineer, Doctor of engineering (DSc)  |c Rector of the TPU (1990 - 2008), professor  |f 1939-  |g Yuri Petrovich  |2 stltpush  |3 (RuTPU)RU\TPU\pers\24842 
801 1 |a RU  |b 63413507  |c 20091120 
801 2 |a RU  |b 63413507  |c 20151126  |g RCR 
942 |c BK