Search Results - Fedin I. V. Ivan Vladimirovich

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  1. 1
    Power switching transistors based on gallium nitride epitaxial heterostructures

    Power switching transistors based on gallium nitride epitaxial heterostructures by Erofeev E. V. Evgeny Viktorovich

    Published 2017
    Other Authors: “…Fedin I. V. Ivan Vladimirovich…”
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    Electronic Book Chapter
  2. 2
    Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

    Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

    Published 2017
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    Electronic Book Chapter
  3. 3
    High-voltage MIS-gated GaN transistors

    High-voltage MIS-gated GaN transistors

    Published 2017
    Other Authors: Get full text
    Electronic Book Chapter

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